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High-Linearity, High-Efficiency and Low-Noise RF Silicon and GaN-Based Power Electronic Devices


Explore our extensive portfolio of RF Silicon (Si) and Gallium Arsenide (GaAs) diodes for cost-effective solutions to meet your design’s requirements. Our solutions include PIN diodes and limiter diodes, tuning and multiplier varactors, noise diodes, Schottky barrier diodes, Metal-Nitride-Silicon (MNS) chip capacitors and Gunn diodes. We offer devices in a wide array of package types that can support frequencies from 100 Hz through millimeter wave. These low-noise, high-efficiency linear diodes deliver the quality and reliability that your design requires. 

Product Categories


PIN Diodes

Designed for low-frequency and low-intermodulation switching performance, our portfolio ranges from a culmination of different PIN diodes such as:

  • Ultra-low Cj 
  • Beam lead for broadband  
  • High-power switching/attenuation
  • Radiation detection 

PIN Diodes for MRI Applications

We offer several varieties of diodes optimized for MRI systems. Typically used in receiver protection circuits or receiver arrays, these non-magnetic devices are available in three packages:

  • High-reliability 
  • Surface-mount 
  • Hermetic

Varactor Diodes

Available in a variety of package styles as well as die, our abrupt and hyper abrupt Si and GaAs varactor diodes offer large tuning ratios and high Q value at high frequency. They are often found in Voltage-Controlled Oscillators (VCOs), phase-locked oscillators, high-Q tunable filters and similar applications.

We also offer:

  • Step recovery diodes
  • Harmonic generator varactors
  • Multiplier diodes

Schottky Diodes

We provide Si and GaAs Schottky diodes in flip chip, surface-mount and standard package types. Our unique construction provides a high breakdown voltage with true Schottky characteristics, noted for fast switching and low turn-on voltage. These devices are commonly used in applications such as:

  • Mixers 
  • Detectors 
  • Limiters 
  • Pulse Shaping

Gunn Diodes

Our Gunn diodes feature ultra-low phase noise and 1/f noise and are available in frequencies through the Ku band. They are frequently used in high-reliability, ultra-low phase noise systems such as:

  • Transmitters  
  • Receivers
  • Beacons
  • Radar systems 
  • Radiometers 
  • Instrumentation

Silicon Passive Devices and Noise Diodes

Our Si chip capacitors offer improved reliability and ruggedness over traditional MOS devices. Our noise generation avalanche diodes provide the broadest, most uniform response available with true symmetrical Gaussian white noise that is often used in noise generation for test equipment and noise figure testing.

We also offer:

  • Si chip capacitors
  • Spiral bias element chips 
  • Noise diodes

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Key Benefits


Military and Space

Our RF diodes can be hermetically sealed to meet the most stringent military or space requirements and can be combined to include several functions in a single high-reliability package.

Integration

Integrated packages can provide higher performance benefits at a lower cost than using individual components in your design.

Standard and Custom Development

With our extensive portfolio of products and designs, we can quickly and cost effectively provide solutions to meet your needs.