Silicon Carbide (SiC) and IGBT Gate Driver Solutions
Our configurable mSiC™ gate drivers reduce switching losses and improve system power density, providing a superior solution compared to standard analog MOSFET drivers. Incorporating patented Augmented Switching™ technology and robust short-circuit protection, these digital gate drivers are fully software configurable and prevent false faults and mitigate ringing, Electromagnetic Interference (EMI), overshoot and undershoot in SiC and IGBT power modules.
Lowest System Cost
- Device redundancy is not required
- Ability to focus on the next generation of products instead of redesigning
- No supply interruption of production
Fastest to Market
- Minimize system development time
- Provide earlier and more revenue
- Accelerate your innovation process
Lowest Risk
- Highest reliability and system lifetime
- Lowest component count
- Multiple epi sources and fabs
Highlights
Our fully configurable mSiC gate drivers boost the efficiency and performance of SiC and IGBT power modules by using configurable switching profiles to optimize switching efficiency and device characteristics to meet application requirements. Patented Augmented Switching technology increases robustness and short-circuit protection, prevents false faults, mitigates ringing, reduces Electromagnetic Interference (EMI) and over- and undershoot in SiC and IGBT power modules.
Features
- Patented Augmented Switching technology
- Software configurable
- Temperature and DC link monitoring
- Fast short-circuit and overcurrent protection with seven unique fault conditions
- Module adapter boards available for various topologies
Benefits
- Faster development time with application-specific tailoring
- Lower switching losses and reduced thermal demand
- Reduced voltage overshoot and undershoot
- Increased system reliability with no false faults
- Reduced EMI and ringing
Our Advantage
- Rapidly configurable custom-tailored solution
- Reduce development time
- Designed for SiC
- Wide device compatibility
Explore Our Products
62-mm (D3) Plug-and-Play mSiC™ Gate Driver
- Optimized for 1200V and 1700V 62-mm (D3) SiC MOSFET modules
- Software configurable to your application with two level turn-off
- Compact single-board, top-mount, on-board isolated solution
- 4.5kV primary to secondary isolation
Gate Driver Cores and Module Adapter Boards (MABs)
- Software configurable ±Vgs gate voltages
- Patented Augmented Switching technology
- Robust short circuit protection
- High immunity to noise
IGBT Gate Drivers
- Multi-level turn-off time and voltage level
- Desaturation time and voltage level
- Gate drive voltage +15V/−10V
- Peak gate current ±30A
- IGBTs up to 3.3 kV
- Single-channel, 7W output power
Gate Driver Development Kits
- Compatible with 1200V and 1700V SiC power modules
- Intelligent Configuration Tool (ICT) included
- Kits available with or without power modules
Intelligent Configuration Tool (ICT)
- Quickly and easily characterize new devices
- Change driver settings from benchtop or in the field with no soldering required
- Benefit from:
- Patented Augmented Switching technology profiles
- Fault reporting
- Configurable on- and off-gate voltages
- Adjustable DC link and temperature trip levels
