Live Chat
Need Help?
Privacy PolicyHighly Efficient and Multi-Functional RF Power Transistors
We offer high-performance GaN-on-SiC, High-Electron Mobility Transistor (HEMT)-based discrete CW and pulsed RF and microwave transistor products up to 14 GHz for use in aerospace and defense, commercial radar, interconnected communications, and industrial applications, as well as compliment a wide range of other broad solutions. These devices are available in bare die, plastic QFN/DFN packages and pill and flanged ceramic packages, as well as in integrated 50Ω input/output modular pallets. Our power transistors are highly efficient and provide a successful multi-functionality characteristic across these many broad solutions and application designs.
Applications
Broadband
Discreet die and packaged CW and pulsed power transistors for broadband applications up to 14 GHz.
L- and S-Band Radar
Internally matched packaged power transistor and pallet products for aerospace and defense and commercial radar and transponders.
Communications
Internally matched CW and pulsed power transistor products for communication applications up to 14 GHz.
Industrial
Discrete CW, pulsed die, and packaged power transistors for industrial applications up to 14 GHz.