Our Radio-Frequency (RF) power MOSFETs support frequencies ranging from 2 MHz to 150 MHz, supply voltages from 50V to 300V and output power from 50W to 3 kW. In the past, RF power MOSFETs were limited to applications of 50V or less. We have combined our high-voltage MOSFET technology with RF-specific die geometries to overcome this design limitation. Our VRF family of RF MOSFETs includes replacements for industry-standard RF transistors that offer improved ruggedness and optimized performance). Devices in our DRF family feature a proprietary anti-ring function to eliminate cross conduction in bridge or push-pull topologies. These devices can be externally selected in either an inverting or non-inverting configuration.
The VRF family provides improved ruggedness by increasing the BVDSS over 30 percent from the industry-standard 125V to 170V minimum.
Our MOSFET families are designed to optimize performance, reduce cost and improve reliability for MRI applications.