Our power discrete products are high-quality solutions for a wide range of high-voltage and high-power applications. They include a variety of high-voltage Switch Mode Power Supply (SMPS) transistors—Insulated-Gate Bipolar Transistors (IGBTs) Silicon Carbide (SiC) MOSFETs and Silicon MOSFETs—Diodes and Radio Frequency (RF) MOSFETs. Many of our products are offered in single- and combi-packaged options across a variety of voltage ratings, currents, and package styles.
Product Categories
Silicon Carbide (SiC) Semiconductors
Silicon Carbide (SiC) semiconductors are innovative, new options for improving system efficiency, supporting higher operating temperatures, and reducing costs in your power electronic designs.
Diode and Rectifier Devices
We offer four series of discrete diode products: the medium-speed medium Vf silicon D series, the high-speed silicon DQ series, the silicon Schottky S series and the SiC Schottky Barrier Diode series (see Silicon Carbide Semiconductors).
Insulated-Gate Bipolar Transistors (IGBTs)
Our IGBT portfolio consists of six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop.
RF MOSFETs
Our RF power product offering covers 2 MHz to 150 MHz, 50V to 300V supply voltages and 50W to 3 kW of output power. You can use these devices in applications such as semiconductor capital equipment, MRIs, CO2 lasers and communication.
Power MOSFETs
Designed to maximize performance and reliability, our broad range of silicon MOSFETs includes standard power MOSFETs, Radiation-Hardened MOSFETs, FREDFETs, ultra-fast MOSFETs, super junction MOSFETs and linear MOSFETs.
High-Reliability Power Management
We carry the widest portfolio of qualified MIL-PRF-19500 devices in the industry and augment it with additional screening capabilities to meet your design’s exacting requirements.